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HCTS08MS

Obsolete

Quad 2-Input AND Gate

Features

  • 3 Micron Radiation Hardened SOS CMOS
  • Total Dose 200K RAD(Si)
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
  • Dose Rate Survivability: >1 x 1012 Rads (Si)/Sec
  • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse
  • Latch-Up Free Under Any Conditions
  • Military Temperature Range: -55°C to +125°C
  • Significant Power Reduction Compared to LSTTL ICs
  • DC Operating Voltage Range: 4.5V to 5.5V
  • LSTTL Input Compatibility
  • VIL = 0.8V
  • VIH = VCC/2
  • Input Current Levels Ii ≤ 5µA at VOL, VOH
HCTS08MS Functional Diagram
HCTS08MS Functional Diagram

Description

Support is limited to customers who have already adopted these products.

The Intersil HCTS08MS is a Radiation Hardened Quad 2-Input AND Gate. A high on both inputs force the output to a High state. The HCTS08MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS08MS is supplied in a 14 lead Ceramic Flatpack Package (K suffix) or a 14 lead SBDIP Package (D suffix).

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pitch (mm)Pkg. Dimensions (mm)DLA SMDPb (Lead) FreePb Free CategoryMOQTemp. Range (°C)
HCTS08DMSRObsoleteN/AOut of StockSBDIP14#TubeNot Applicable2.5mm19.0 x 7.4 x 2.415962-95683ExemptGold Plate over compliant Undercoat-e425-55 to +125°C
HCTS08KMSRObsoleteN/AOut of StockCFP14#TrayNot Applicable1.3mm9.8 x 6.5 x 0.005962-95683ExemptGold Plate over compliant Undercoat-e425-55 to +125°C
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    Recommended Documents (1)

  1. Datasheet
    HCTS08MS Datasheet
    RECOMMENDED
    PDF 361 KB hcts08ms Mar 31, 1992

    Datasheets (1)

  1. Datasheet
    HCTS08MS Datasheet
    RECOMMENDED
    PDF 361 KB hcts08ms Mar 31, 1992

    Application Notes & White Papers (1)

  1. Application Note
    AN9867: End of Life Derating: A Necessity or Overkill
    PDF 338 KB an9867 Nov 10, 1999
    AI-generated Summary: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.

    Marketing Collateral (1)

  1. Brochure
    Intersil Commercial Lab Services
    PDF 467 KB commercial-lab-services Sep 01, 2023
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