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Features

  • 3 Micron Radiation Hardened SOS CMOS
  • Total Dose 200K RAD(Si)
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
  • Dose Rate Survivability: >1 x 1012 Rads (Si)/s
  • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse
  • Latch-Up Free Under Any Conditions
  • Military Temperature Range: -55°C to +125°C
  • Significant Power Reduction Compared to LSTTL ICs
  • DC Operating Voltage Range: 4.5V to 5.5V
  • Input Logic Levels
  • VIL = 30% of VCC Max
  • VIH = 70% of VCC Min
  • Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

Support is limited to customers who have already adopted these products.

The Intersil HCS02MS is a Radiation Hardened Quad 2-Input NOR Gate. A low on both inputs forces the output to a High state. The HCS02MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS02MS is supplied in a 14 lead Ceramic Flatpack Package (K suffix) or a 14 lead SBDIP Package (D suffix).

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pitch (mm)Pkg. Dimensions (mm)DLA SMDPb (Lead) FreePb Free CategoryMOQTemp. Range (°C)
HCS02DMSRObsoleteN/AOut of StockSBDIP14#TubeNot Applicable2.5mm19.0 x 7.4 x 2.415962-95679ExemptGold Plate over compliant Undercoat-e425-55 to +125°C
HCS02KMSRObsoleteN/AOut of StockCFP14#TrayNot Applicable1.3mm9.8 x 6.5 x 0.005962-95679ExemptGold Plate over compliant Undercoat-e425-55 to +125°C
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