Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

Features

  • Logic level operation (5 to 6 V Gate drive)
  • High endurance capability against to the short circuit
  • Built-in the over temperature shut-down circuit
  • Temperature hysteresis type.
  • High density mounting.

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
HAF2015RJ-EL-EObsoleteAvailableIn StockSOP8#Embossed Tape1Yes

Knowledge Base

  1. SOA of both devices guarantee the thermal shutdown operation

    SOA of both devices guarantee the thermal shutdown operation even though Id (Drain current) exceed the absolute maximum ratings of Id. A semiconductor is prohibited to exceed the absolute maximum ratings. But the SOA of both devices (HAF2015RJ & HAF2026RJ) exceed it.​ In normal use, the absolute maximum rating cannot ...

    Aug 31, 2022
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?