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3.3V 512K x 18 Synchronous 3.3V I/O Flow-Through SRAM

Package Information

Lead Count (#) 165
Pkg. Code BQ165
Pitch (mm) 1
Pkg. Type CABGA
Pkg. Dimensions (mm) 15.0 x 13.0 x 1.2

Environmental & Export Classifications

Pb (Lead) Free No
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

Product Attributes

Lead Count (#) 165
Pb (Lead) Free No
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Architecture Synch Burst
Bus Width (bits) 18
Core Voltage (V) 3.3
Density (Kb) 9216
I/O Voltage (V) 3.3 - 3.3
Length (mm) 15.0
MOQ 2000
Organization 512K x 18
Output Type Flowthrough
Package Area (mm²) 195.0
Pb Free Category e0
Pitch (mm) 1.0
Pkg. Dimensions (mm) 15.0 x 13.0 x 1.2
Pkg. Type CABGA
Qty. per Carrier (#) 0
Qty. per Reel (#) 2000
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range -40 to 85°C
Thickness (mm) 1.2
Width (mm) 13.0

Description

The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.