Skip to main content
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flow-Through SRAM

Package Information

Lead Count (#) 119
Pkg. Code BG119
Pitch (mm) 1.27
Pkg. Type PBGA
Pkg. Dimensions (mm) 14.0 x 22.0 x 2.15

Environmental & Export Classifications

Pb (Lead) Free No
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

Product Attributes

Lead Count (#) 119
Pb (Lead) Free No
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Country of Assembly Taiwan
Country of Wafer Fabrication Taiwan, United States
Price (USD) | 1ku 22.31234
Architecture ZBT
Bus Width (bits) 36
Core Voltage (V) 3.3
Cycle Time (ns) 80
Density (Kb) 9216
I/O Voltage (V) 2.5 - 2.5
Length (mm) 14.0
MOQ 1000
Organization 256K x 36
Output Type Flowthrough
Package Area (mm²) 308.0
Pb Free Category e0
Pitch (mm) 1.27
Pkg. Dimensions (mm) 14.0 x 22.0 x 2.15
Pkg. Type PBGA
Qty. per Carrier (#) 0
Qty. per Reel (#) 1000
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range 0 to 70°C
Thickness (mm) 2.15
Width (mm) 22.0

Description

The 71V65703 3.3V CMOS SRAM, organized as 256K x 36, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65703 contains address, data-in, and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.