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3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout

Package Information

Lead Count (#) 48
Pkg. Code BE48
Pitch (mm) 0.75
Pkg. Type CABGA
Pkg. Dimensions (mm) 9.0 x 9.0 x 1.2

Environmental & Export Classifications

Pb (Lead) Free No
Moisture Sensitivity Level (MSL) 4
ECCN (US) NLR
HTS (US) 8542320041

Product Attributes

Lead Count (#) 48
Pb (Lead) Free No
Carrier Type Tray
Moisture Sensitivity Level (MSL) 4
Country of Assembly Philippines
Country of Wafer Fabrication Taiwan, United States
Price (USD) | 1ku 7.48736
Access Time (ns) 12
Architecture Asynchronous
Bus Width (bits) 16
Core Voltage (V) 3.3
Density (Kb) 4096
I/O Voltage (V) 3.3 - 3.3
Length (mm) 9.0
MOQ 250
Organization 256K x 16
Package Area (mm²) 81.0
Pb Free Category e0
Pitch (mm) 0.75
Pkg. Dimensions (mm) 9.0 x 9.0 x 1.2
Pkg. Type CABGA
Qty. per Carrier (#) 250
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range -40 to 85°C
Thickness (mm) 1.2
Width (mm) 9.0

Description

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.