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3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

Package Information

CAD Model:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQG165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

Environmental & Export Classifications

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)EAR99
HTS (US)8542.32.0041

Product Attributes

Lead Count (#)165
Pb (Lead) FreeYes
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
Country of AssemblyPHILIPPINES
Country of Wafer FabricationTAIWAN, USA
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Frequency (MHz)166 - 166
I/O Voltage (V)3.3 - 3.3
Length (mm)15
MOQ2000
Organization128K x 36
Output TypePipelined
Package Area (mm²)195
Pb Free Categorye1 SnAgCu
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
PublishedNo
Qty. per Carrier (#)0
Qty. per Reel (#)2000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.2
Width (mm)13

Description

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.