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3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

Package Information

Lead Count (#) 119
Pkg. Code BGG119
Pitch (mm) 1.27
Pkg. Type PBGA
Pkg. Dimensions (mm) 14.0 x 22.0 x 2.15

Environmental & Export Classifications

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

Product Attributes

Lead Count (#) 119
Pb (Lead) Free Yes
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Country of Assembly Taiwan
Country of Wafer Fabrication Taiwan, United States
Price (USD) | 1ku 9.18596
Architecture Synch Burst
Bus Width (bits) 36
Core Voltage (V) 3.3
Density (Kb) 4608
I/O Frequency (MHz) 1 - 1
I/O Voltage (V) 3.3 - 3.3
Length (mm) 14
MOQ 1000
Organization 128K x 36
Output Type Pipelined
Package Area (mm²) 308.0
Pb Free Category e1 SnAgCu
Pitch (mm) 1.27
Pkg. Dimensions (mm) 14.0 x 22.0 x 2.15
Pkg. Type PBGA
Qty. per Carrier (#) 0
Qty. per Reel (#) 1000
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range 0 to 70°C
Thickness (mm) 2.15
Width (mm) 22

Description

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.