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3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

Package Information

Lead Count (#) 100
Pkg. Code PKG100
Pitch (mm) 0.65
Pkg. Type TQFP
Pkg. Dimensions (mm) 20.0 x 14.0 x 1.4

Environmental & Export Classifications

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

Product Attributes

Lead Count (#) 100
Pb (Lead) Free Yes
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Price (USD) | 1ku 6.47069
Architecture Synch Burst
Bus Width (bits) 36
Core Voltage (V) 3.3
Density (Kb) 4608
I/O Frequency (MHz) 1 - 1
I/O Voltage (V) 3.3 - 3.3
Length (mm) 20.0
MOQ 144
Organization 128K x 36
Output Type Pipelined
Package Area (mm²) 280.0
Pb Free Category e3 Sn
Pitch (mm) 0.65
Pkg. Dimensions (mm) 20.0 x 14.0 x 1.4
Pkg. Type TQFP
Qty. per Carrier (#) 72
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range 0 to 70°C
Thickness (mm) 1.4
Width (mm) 14.0

Description

The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.