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Renesas Electronics Corporation

Features

  • True dual-ported memory cells allow simultaneous access of the same memory location
  • On-chip port arbitration logic
  • Interrupt flags for port-to-port communication
  • Fully asynchronous operation from either port
  • Battery backup operation, 2V data retention (L only)
  • TTL-compatible, single 3.3V ±0.3V power supply
  • Available in a 64-pin STQFP package
  • Industrial temperature range (–40 °C to +85 °C) is available

Description

The 71V30 high-speed 1K x 8 dual-port static RAM is designed to be used as a stand-alone 8-bit dual-port SRAM. It has two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power-down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low standby power mode.

Parameters

AttributesValue
Core Voltage (V)3.3
Bus Width (bits)8
Density (Kb)8
Pkg. CodePPG64
InterfaceAsync
I/O Type3.3 V LVTTL
Access Time (ns)25, 35, 55
Temp. Range (°C)-40 to 85°C, 0 to 70°C
ArchitectureDual-Port
Organization1K x 8
FunctionBusy, Interrupt, Master

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
TQFP10.0 x 10.0 x 1.4640.5

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