Lead Count (#) | 81 |
Pkg. Type | CABGA |
Pkg. Code | BYG81 |
Pitch (mm) | 0.5 |
Pkg. Dimensions (mm) | 5.0 x 5.0 x 1.0 |
Pb (Lead) Free | Yes |
ECCN (US) | NLR |
HTS (US) | 8542320041 |
Moisture Sensitivity Level (MSL) | 3 |
Pkg. Type | CABGA |
Lead Count (#) | 81 |
Pb (Lead) Free | Yes |
Carrier Type | Tray |
Access Time (ns) | 55 |
Architecture | Dual-Port |
Bus Width (bits) | 16 |
Core Voltage (V) | 1.8 |
Density (Kb) | 128 |
Function | Interrupt, Std. SRAM Interface |
I/O Type | 1.8V LVCMOS, 2.5V LVCMOS, 3.0V LVTTL |
Interface | Async |
Length (mm) | 5 |
MOQ | 490 |
Moisture Sensitivity Level (MSL) | 3 |
Organization | 8K x 16 |
Package Area (mm²) | 25.0 |
Pb Free Category | e1 SnAgCu |
Pitch (mm) | 0.5 |
Pkg. Dimensions (mm) | 5.0 x 5.0 x 1.0 |
Qty. per Carrier (#) | 490 |
Qty. per Reel (#) | 0 |
Requires Terms and Conditions | Does not require acceptance of Terms and Conditions |
Tape & Reel | No |
Temp. Range | -40 to 85°C |
Thickness (mm) | 1 |
Width (mm) | 5 |
The IDT70P254 is a very low power 8K x 16 Dual-Port Static RAM. The IDT70P254 is designed to be used as a stand-alone 128K-bit Dual-Port SRAM. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CS permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 27mW of power.