Features
- Host controller bus isolation from the DRAM memory during "save" and "restore" operations between DRAM and NVDIMM non-volatile memory
- AC and DC parameters optimized for DDR4, enabling the highest possible memory channel performance for NVDIMMs even when intermixed with other DIMM types
- 12-bit bus switch/multiplexer to best match the eight DQ pins and four DQS pins coming from each DRAM
- VFBGA 48-pin package for a compact footprint that can replace data buffers on the DIMM for NVMDIMM applications
- Make-before-break circuit to prevent glitches during switching operations
Description
The 4MX0121V is a 12-bit bus switch/multiplexer (MUX) designed for 2.5V supply voltage operation. The MUX is designed for operation in DDR3 and DDR4 memory bus systems. The 4MX0121V has a 1:2 switch or 2:1 multiplex topology with a 12-bit wide bus.
The 4MX0121V uses a high-speed switch architecture providing high bandwidth, low insertion loss, return loss, and very low propagation delay, allowing for the use in many applications requiring switching or multiplexing of high-speed signals.
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Qty. per Reel (#) | Qty. per Carrier (#) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 4MX0121VA13AVG | Obsolete | N/A | Out of Stock | FCCSP | 48# | Tray | 3 | 0 | 364# | Yes | e3 Sn | 0 to 70°C |
| 4MX0121VA13AVG8 | Obsolete | N/A | Out of Stock | FCCSP | 48# | Reel | 3 | 4000# | 0 | Yes | e3 Sn | 0 to 70°C |
- End Of Life NoticePDF 122 KB Mar 26, 2021
- Product Change NoticePDF 25 KB 7WDXRDKU4E7E-5-63506 Dec 16, 2018
- Product BriefPDF 1.48 MB 7WDXRDKU4E7E-6-10028 Mar 04, 2015
- Product BriefPDF 1.48 MB 7WDXRDKU4E7E-6-10028 Mar 04, 2015
Recommended Documents (1)
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- End Of Life NoticePDF 122 KB Mar 26, 2021
- Product Change NoticePDF 25 KB 7WDXRDKU4E7E-5-63506 Dec 16, 2018
Product Notices (PCN, EOL, etc) (2)
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- Product BriefPDF 1.48 MB 7WDXRDKU4E7E-6-10028 Mar 04, 2015
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A white paper authored by IDT (acquired by Renesas) and Micron details research into memory and bandwidth for today's high-performance servers. LRDIMMS and RDIMMS traditionally have been seen as complementary, with the former targeting applications requiring deeper memory and the latter for applications requiring higher bandwidth.
The introduction of 8-gigabit DRAMS has resulted in a growing number of Internet applications benefiting from both deeper memories and higher bandwidth. This paper shows how 32 GB 2RX4 LRDIMMs transcend similar RDIMMs to meet the needs of today’s data center enterprise servers, by providing an optimal combination of deeper memory and higher data bandwidth, even at mainstream module densities.
Description
IDT DDR4 RCD register and DB data buffer enable RDIMM and LRDIMM to faster speeds and deeper memories. This video helps you understand the DDR4 feature enhancements of IDT's DDR4 RCD and DB compared to earlier DDR3 technology. An introduction to some available LeCroy testing and debug tools complete the video. Presented by Douglas Malech, Product Marketing Manager at IDT, and Mike Micheletti, Product Manager at Teledyne LeCroy.