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Renesas Electronics Corporation

Features

  • Low on-state resistance
    RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
  • Low gate to drain charge
    QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)
  • 4.5 V drive available

Description

The 2SK4178 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

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