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Renesas Electronics Corporation

Features

  • 4.0 V drive available
  • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 514 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 556 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)

Description

Support is limited to customers who have already adopted these products.

The 2SJ626 is a switching device which can be driven directly by a 4. 0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
2SJ626-T1B-AObsoleteN/AOut of StockTMM3#Embossed Tape1Yes
2SJ626-T1B-ATObsoleteN/AOut of StockTMM3#Embossed Tape1Yes
2SJ626(0)-T1B-AObsoleteN/AOut of StockTMM3#Embossed Tape1Yes
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