Overview
Description
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The Radiation Hardened ACS08MS is a Quad 2-Input AND Gate. For each gate, a HIGH level on both the A and B inputs results in a HIGH level on the Y output. A LOW level on either the A or B input results in a LOW level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS08MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS08 are contained in SMD 5962-95651.
Features
- QML Qualified Per MIL-PRF-38535 Requirements
- 1.25Micron Radiation Hardened SOS CMOS
- Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose 3 x 105 RAD(Si)
- SEU Immunity <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold >100MeV/(mg/cm2)
- Input Logic Levels VIL = (0.3)(VCC), VIH = (0.7)(VCC)
- Output Current ±8mA (Min)
- Quiescent Supply Current 100µA (Max)
- Propagation Delay 15ns (Max)
Comparison
Applications
- High Speed Control Circuits
- Sensor Monitoring
- Low Power Designs
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 219 KB | |
| Brochure | PDF 467 KB | |
| Application Note | PDF 338 KB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
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