GaN E-HEMT 650V/30A, 50mΩ with RAA226110 Gate Driver, 0V Turn-off Voltage Evaluation Board

The RTK226110DE0010BU is an RAA226110 gate drive evaluation board. This evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half-bridge-based topology, either with the universal motherboard (P/N: GS665MB-EVB) or users’ own system design. The RTK226110DE0010BU board provides a 0V turn-off voltage solution. The 0V turn-off solution is normally used in low power applications and is easy to implement, as there is no need for a negative power supply rail.