Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | Wafer |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| Pb (Lead) Free | No |
| RoHS (RJP1CS07DWA-00#W0) | EnglishJapanese |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Pkg. Type | Wafer |
| Pb (Lead) Free | No |
| Channels (#) | 1 |
| IC @100 °C (A) | 150 |
| IC @25 °C (A) | 300 |
| Lead Compliant | No |
| MOQ | 1 |
| Nch/Pch | Nch |
| Tape & Reel | No |
| VCE (sat) (V) | 1.8 |
| VCES (V) | 1250 |
| VDSS (Max) (V) | 1250 |
| tf (Typical) (µs) | 0.15 |
| tsc (μs) | 10 |
Resources for RJP1CS07DWA
Description
The RJP1CS07DWA 1250V, 150A insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.