Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | Wafer |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Pkg. Type | Wafer |
| Application | Inverter |
| Channels (#) | 1 |
| IC @100 °C (A) | 25 |
| Lead Compliant | Yes |
| MOQ | 1 |
| Nch/Pch | Nch |
| Pb (Lead) Free | No |
| Qualification Level | Industrial |
| Series Name | RBNxxN125S1U Series |
| Tape & Reel | No |
| VCE (sat) (V) | 1.8 |
| VCES (V) | 1250 |
| tsc (μs) | 10 |
Resources for RBN25N125S1UFWA
Description
Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) feature an exclusive trench gate configuration in the process structure. These devices deliver faster switching performance compared to earlier IGBT generations and reduce conduction losses by lowering the saturation voltage.
The RBN25N125S1UFWA 1250V/25A IGBT offers a low collector-to-emitter saturation voltage, making it suitable for power switching applications. It is available as an unsawn wafer.