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270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application

Package Information

CAD Model: View CAD Model
Pkg. Type:
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

RoHS (NX6350GP29-AZ) EnglishJapanese
Moisture Sensitivity Level (MSL)
Pb (Lead) Free Yes
ECCN (US)
HTS (US)

Product Attributes

Ith (Typical) (mA) 8
Lead Compliant No
MOQ 1
Pb (Lead) Free Yes
Pf / Po (Min) (mW) 8.5
Remarks FL=7.5mm, λp=1270nm, 1330nm
Tape & Reel No
Target applications Bi-Directional 6G/10G SFP
Tstg (Max) (°C) 95
Tstg (Min) (°C) -40
Λp (Typical) for BD (nm) 1330

Description

The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.