Overview
Description
The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance
RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) - High current rating: ID(DC) = ±110 A
Comparison
Applications
Documentation
Featured Documentation
Log in required to subscribe
|
|
|
|
|---|---|---|
| Type | Title | Date |
| Datasheet | PDF 270 KB | |
| Guide | PDF 796 KB | |
| Application Note | PDF 3.23 MB 日本語 | |
| Application Note | PDF 648 KB 日本語 | |
4 items
|
||
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
Product Options
Applied Filters: