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Renesas Electronics Corporation

Features

  • Super low on-state resistance
    RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
  • High Current Rating: ID(DC) = ±110 A

Description

The 2SK3811-ZP is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelIndustrial
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
Gate LevelStandard
VDSS (Max) (V)40
ID (A)110
RDS (ON) (Max) @10V (mohm)1.8
Pch (W)213
Ciss (Typical) (pF)17700
Qg typ (nC)260

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-25ZP10 x 9 x 4.93
Part NumberStatusSamplesStockPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
2SK3811(0)-ZP-E1-AZActiveN/AIn StockMP-25ZP1ku | $1.9883#Embossed Tape1YesMALAYSIAJAPAN
2SK3811-ZP-E1-AYNRNDN/AOut of StockMP-25ZP1ku | $2.3733#Embossed Tape1YesMALAYSIAJAPAN
2SK3811-ZP-E1-AZObsoleteN/AOut of StockMP-25ZP3#Embossed Tape1Yes
2SK3811(0)-ZP-E1-AYObsoleteN/AOut of StockMP-25ZP3#Embossed Tape1Yes
2SK3811(0)-ZP-E2-AZObsoleteN/AOut of StockMP-25ZP3#Embossed Tape1Yes
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