Focus Areas for Power Discrete Devices

Renesas' power discrete devices focus on high power applications in automotive and industrial by IGBT/Power MOS. Renesas plans to broaden its portfolio by focusing on a wide range of compound devices such as SiC and GaN.


Power Diodes

Offer quick recovery times for rectification in very high frequency applications

Power IGBTs (Insulated Gate Bipolar Transistors)

Low saturation voltage and fast switching through thin wafer technology


MOSFETs for low on-resistance, high-speed switching and high-robustness

Power Thyristors and Triacs

Triac and thyristor with a guaranteed junction temperature (Tj) of 150 °C


Type Title Date
Guide PDF 1.71 MB
Brochure PDF 1.92 MB
Flyer PDF 665 KB 日本語 , 简体中文
3 items
IGBT Products

Renesas IGBT products Line-up