EEPROM
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Overview
Description
Support is limited to customers who have already adopted these products.
Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.
Features
- Single supply: 2.7 to 5.5 V
- Access time: 85 ns (max)/100 ns (max) at 4.5 V ≤ VCC < 5.5 V 120 ns (max) at 2.7 V ≤ VCC ≤ 5.5 V
- Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 μW (max)
- On-chip latches: address, data, CE, OE, WE
- Automatic byte write: 10 ms (max)
- Automatic page write (64 bytes): 10 ms (max)
- Ready/Busy (only the R1EV58256BxxR series)
- Data polling and Toggle bit
- Data protection circuit on power on/off
- Conforms to JEDEC byte-wide standard
- Reliable CMOS with MONOS cell technology
- 10⁵ or more erase/write cycles
- 10 or more years data retention
- Software data protection
- Write protection by RES pin (only the R1EV58256BxxR series)
- Temperature range: -40 to 85°C
- There are lead free products.
Documentation
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Datasheet
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Guide
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PDF147 KB Related Files:
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PDF228 KB Related Files:
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Application Note
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PDF189 KB
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Application Note
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PDF1.32 MB
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Brochure
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Datasheet
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Guide
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Overview
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Product Change Notice
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Product Change Notice
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Product Change Notice
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Technical Update
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Technical Update
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Technical Update
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PDF446 KB
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Technical Update
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Technical Update
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Design & Development
Models
ECAD Models
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Product Options
Processing table
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