Overview

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

Features

  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Low on-resistance RDS(on) : 53 mΩ Typ, 65 mΩ Max (VGS = –10 V)
  • High density mounting
  • AEC-Q101 Compliant

Documentation

Type
Date
PDF 156 KB 日本語 Datasheet
PDF 6.61 MB Brochure
PDF 3.23 MB 日本語 Application Note
PDF 648 KB 日本語 Application Note
PDF 4.86 MB 日本語 Product Change Notice
PDF 2.24 MB Brochure
PDF 3.74 MB 日本語 Product Change Notice
PDF 1.46 MB 日本語 Product Change Notice
PDF 1.32 MB Brochure
9 items

Design & Development

Models

Support