Overview

Description

The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance
    • RDS(on) = 1.25 mΩ MAX. (VGS = 10 V, ID = 80A)
  • Low input capacitance
    • Ciss = 8800pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Applications

Documentation

Document title Document type Type Date Date
PDF 413 KB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 2.24 MB Brochure
PDF 1.71 MB Guide
4 items

Design & Development

Models

Support