Overview

Description

The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
  • High current rating: ID(DC) = ∓100 A

Documentation

Document title Document type Type Date Date
PDF 1.32 MB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 2.24 MB Brochure
PDF 1.71 MB Guide
PDF 224 KB Product Reliability Report
5 items

Design & Development

Models

Models

Title Type Type Date Date
ZIP 1 KB Model - SPICE
1 item

Support