Skip to main content
Renesas Electronics Corporation

Features

  • Low on-state resistance
    RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A )
  • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V )
  • High current : ID(DC) = ±65A
  • RoHS Compliant
  • Quality Grade : Standard

Description

The N0607N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelIndustrial
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-252 / DPAK
Gate LevelStandard
VDSS (Max) (V)60
ID (A)65
RDS (ON) (Max) @10V (mohm)8.4
Pch (W)87.4
Ciss (Typical) (pF)3300
Qg typ (nC)58
Series NameN0 Series

Package Options

Pkg. TypeLead Count (#)
TO-2523

Applied Filters: