The ISL81807 is a dual synchronous boost controller that generates two independent outputs or one output with two interleaved phases for a wide variety of applications in industrial and general-purpose segments. With a wide input and output voltage ranges, the controller is suitable for telecommunication, data center, and computing applications.
The ISL81807 provides a gate driver voltage of 5.3V. With its small dead time setting, it is a perfect controller for the E-mode GaN FET devices.
The ISL81807 uses peak current mode control with phase interleaving for the two outputs. Each output has a voltage regulator, current monitor, and average current regulator to provide independent average voltage and current control. The internal Phase-Locked Loop (PLL) oscillator assures an accurate frequency setting from 100kHz to 2MHz, and the oscillator can be synchronized to an external clock signal for frequency synchronization and phase interleave paralleling applications. This PLL circuit can output a phase-shift-programmable clock signal that is used for multi-phase cascade synchronization with required interleaving phase shift.
The ISL81807 features programmable soft-start and accurate threshold enable functions along with a power-good indicator to simplify power supply rail sequencing. It also provides full protection features such as OVP, UVP, OTP, and average and peak current limit on both outputs to ensure high reliability.
The device is packaged in a space conscious 32 Ld 5 × 5 mm TQFN.
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| Datasheet | PDF 996 KB | |
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| iSim:PE Offline Simulation Tool iSim Personal Edition (iSim:PE) speeds the design cycle and reduces risk early in any project, identifying parts that can be used in current as well as next-generation designs.
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Simulator | Renesas |
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The ISL81807EVAL1Z dual-phase evaluation board features the ISL81807, an 80V high voltage dual synchronous boost controller that offers external soft-start, independent...
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An overview of the industry’s first high-performance 80V dual-phase buck and boost controllers optimized to drive GaN FETs. With high efficiency, tight load regulation and current sharing, these devices deliver ideal power solutions for industrial automation, telecommunications, medical and automotive applications.
