Overview

Description

The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
  • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 219 KB
Guide PDF 2.65 MB
Application Note PDF 3.23 MB 日本語
Product Reliability Report PDF 223 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
6 items

Design & Development

Models