Features
- 30mOhm, 650V GaN device in TO-247 package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Zero reverse recovery charge
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
Description
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 30 |
| RDSON (max) (mΩ) | 41 |
| Vth typ (V) | 4 |
| Id max @ 25°C (A) | 55.7 |
| Qg typ (nC) | 24.5 |
| Qoss (nC) | 135 |
| Ron * Qoss (FOM) | 4050 |
| Ciss (Typical) (pF) | 1500 |
| Coss (Typical) (pF) | 127 |
| trr (Typical) (nS) | 36 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type |
|---|
| TO-247 |
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Additional Applications
- AI data center and telecom power supplies
- E-mobility charging
- PV inverter
- Uninterruptible Power Supply (UPS)
- Battery Energy Storage System (BESS)