Overview

Description

The F0111 is a dual path 2200MHz to 4200MHz High Gain / Ultra-Low Noise Amplifier (LNA) that is used in receiver applications.

The F0111 LNA is operated as a balanced amplifier where the inputs and outputs are combined using external 90° couplers and provides 18.5dB of gain with 0.55dB noise figure and 38.5dBm OIP3 performance at 2600MHz. The device uses a single 5V supply and 90mA typical of total ICC.

The F0111 is packaged in a 4mm × 4 mm, 16-VFQFPN with 50Ω single-ended RF input and output impedances for ease of integration into the signal path.

Features

  • 2200MHz to 4200MHz operating range
  • 18.5dB typical Gain
  • 0.55dB typical NF
  • 18.5 typical OIP3
  • 50Ω Single-ended Input/Output impedances
  • +5V power supply
  • ICC = 45mA per channel
  • Independent Channel Standby modes for power savings
  • 1.8V Logic Standby control
  • Operating temperature (TEP) range: -40 °C to +105 °C
  • 4mm x 4 mm, 16-VFQFPN package

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.13 MB
Guide PDF 2.24 MB
Product Change Notice PDF 550 KB
Product Brief PDF 983 KB
Product Brief PDF 506 KB
5 items

Design & Development

Boards & Kits

Boards & Kits

Models

IDT RF Product Benefits Overview

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Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

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Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.