The HIP2210EVAL1Z evaluation board is designed to provide a quick and comprehensive method for evaluating the HIP2210 100V, 3A source, 4A sink, high frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Two N-channel MOSFETs (with dual footprint supporting multiple packages such as TO220 and DPAK) and an inductor-capacitor LC filter are included on the evaluation board to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator.
The HIP2210 half-bridge driver is offered in a 10 Ld DFN package (with enhanced thermal EPAD). The HIP2210EVAL1Z evaluation board operates from a supply voltage of 6V to 18V DC with the capability of driving both the high-side and low-side MOSFETs in a 100V half-bridge configuration ICs.
- 3A source and 4A sink NMOS gate drivers
- Internal level shifter and bootstrap diode for gate driver on high-side NFET
- Up to 100V high-side bootstrap reference
- 6V to 18V bias supply operation
- Fast 15ns typical propagation delay and 2ns typical propagation delay match supports up to 1MHz operation
- Telecom half-bridge and full-bridge DC/DC converters
- 3-phase BLDC motor driver; H-bridge motor driver
- Two-switch forward and active clamp converters
- Multiphase PWM DC/DC controllers
- Class-D amplifiers
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Disclaimer: THIS MATERIAL IS PROVIDED “AS-IS” FOR EVALUATION PURPOSES ONLY. RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (collectively, “Renesas”) DISCLAIM ALL WARRANTIES, INCLUDING WITHOUT LIMITATION, FITNESS FOR A PARTICULAR PURPOSE AND MERCHANTABILITY. Renesas provides evaluation platforms and design proposals to help our customers to develop products. However, factors beyond Renesas' control, including without limitation, component variations, temperature changes and PCB layout, could significantly affect the product performance. It is the user’s responsibility to verify the actual circuit performance.