Dual-port memory (or dual-ported RAM) supports multiple reads or writes simultaneously within the memory to improve performance. Dual-port memory allows two memory cell accesses per clock cycle, compared to only one for single-port memory. Our dual-port solutions feature an eight-transistor basic memory cell—optimized and offered in highly compact packages to prevent the need for larger die sizes.
Overview
We offer exceptional asynchronous dual-port RAM solutions that combine advanced capabilities with extensive system design expertise. Our memory devices operate without clocked inputs or outputs, responding instantly to address and control pin changes. These dynamic RAMs enable simultaneous access to a single static SRAM memory location from two buses, simplifying design while enhancing performance. Equipped with arbitration logic, our asynchronous dual-port RAMs minimize system conflicts—ideal for high-bandwidth applications.
Improved Bandwidth Efficiency
Double SRAM bandwidth delivers higher performance for demanding applications.
Simplified System Design
Reduced complexity enables faster, more efficient development.
Accelerated Market Readiness
Shorten design cycles to speed up product launches and go to market faster.
Customizable Voltage Options
Support for 2.5V to 5V I/O voltages meets your diverse system requirements.
About Dual-Port Memory
Key Dual-Port Parameters
- Core Voltage: Supply voltage powering the dual-port RAM is typically determined by the system’s available power rails.
- I/O Voltage: Voltage used for data input and output is separate from core voltage in some devices.
- Bus Width: Number of “lanes” used to read and write to the dual-port RAM. Renesas offers all popular configurations.
- Memory Density: The number of bits the dual-port RAM can hold. We offer sizes up to 18Mb.
- Access Time: Duration required to locate and make information available for processing. Renesas solutions offer access times as short as 8 nanoseconds.
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