| CADモデル: | View CAD Model |
| Pkg. Type: | MSOP |
| Pkg. Code: | PVSP0008JA-A |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | |
| Pitch (mm): | 0.65 |
| Moisture Sensitivity Level (MSL) | 1 |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.33.0001 |
| Pb (Lead) Free | Yes |
| Pkg. Type | MSOP |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Country of Assembly | JAPAN |
| Country of Wafer Fabrication | JAPAN |
| Bandwidth (MHz) | 4 |
| CMRR (dB) | 100 |
| Channels (#) | 2 |
| Common Mode Input Voltage Range (V) | 3 - 32 |
| Common Mode Input Voltage Range Vicm (Hi Side) ( Ref Only) | V+-1.8V(Max.) |
| Common Mode Input Voltage Range Vicm (Low Side) (Ref Only) | 0(Min.) |
| Dual Supplies (±V) | 16 - 16 |
| Dual Supply Range (V) | V+-16V(Max.) |
| Enable | - |
| Family Name | General-purpose Op Amps |
| Function | High Voltage Bipolar Dual Operational Amplifier Low Input Offset Voltage VIO max 1mV |
| GBA (Ref. Only) (MHz) | 0.5 |
| Gain Min | 25000 |
| IBIAS (nA) | 6 |
| IN/OUT Full Range | No |
| IOUT (A) | 0.03 |
| IS (mA) | 4.3 |
| IS per Amp (mA) | 2.15 |
| Input Offset Voltage Vio (Max) (mV (±)) | 1 |
| Lead Compliant | No |
| Lead Count (#) | 8 |
| Length (mm) | 2.9 |
| MOQ | 5000 |
| Min Operating Temperature (°C) | -40 |
| Offset Voltage (Max) (mV) | 1 |
| Output Voltage Swing Range (V) | VOL1+13.7(Min.)-13.7(Max)VOL2+13.5(Min.)-13.5(Max) |
| Pb (Lead) Free | Yes |
| Pb Free Category | Yes |
| Pitch (mm) | 0.65 |
| Process | Bipolar |
| Qty. per Reel (#) | 5000 |
| Qualification Level | Standard |
| Rail-to-Rail Input | No |
| Rail-to-Rail Output | No |
| Simulation Model Available | SPICE |
| Single Supply Voltage Range (V) | 3 - 32 |
| Slew Rate (V/µs) | 5.5 |
| Supply Current Icc/Idd (Max) (mA) | 6 |
| Supply Voltage Vcc Range | 3 - 32 |
| Tape & Reel | Yes |
| Temp. Range (°C) | -40 to +125 |
| Thermal Shutdown | No |
| Topology [Rail 1] | - |
| VS (Max) (V) | 32 |
| VS (Min) (V) | 3 |
| Width (mm) | 2.8 |
REAC842G はVIO ≤ ±1mV を実現した低入力オフセット電圧・低温度ドリフトが特長のバイポーラ単電源デュアル・オペアンプです。 回路にハイスピード PNP トランジスタを採用し、スルーレート、利得帯域積などの諸特性を改善するとともに、耐負荷容量安定性も向上しており、しかもクロスオーバひずみがありません。 高スルーレート製品のため高速信号の増幅が可能となり、モータ関係など幅広いセンサ用途への応用が可能です。 また小型パッケージ(MSOP) のためセンサ近傍への実装が可能となり基板の小型化、設計自由度が上がります。