Pitch (mm) | 0.5 |
Lead Count (#) | 12 |
Pkg. Dimensions (mm) | 3.99 x 3.99 x 0.90 |
Pkg. Code | LFP |
Pkg. Type | DFN |
Moisture Sensitivity Level (MSL) | 3 |
Pb (Lead) Free | Yes |
ECCN (US) | EAR99 |
HTS (US) | 8542.39.0090 |
RoHS (HIP2101IR4ZT) | ダウンロード |
Lead Count (#) | 12 |
Carrier Type | Reel |
Moisture Sensitivity Level (MSL) | 3 |
Pitch (mm) | 0.5 |
Pkg. Dimensions (mm) | 4.0 x 4.0 x 0.90 |
Pb (Lead) Free | Yes |
Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
Temp. Range | -40 to +85°C |
Country of Assembly | Malaysia |
Country of Wafer Fabrication | United States |
Bootstrap Supply Voltage (Max) (V) | 114 |
Charge Pump | No |
Fall Time | 10 |
Input Logic Level | 3.3V/TTL |
Length (mm) | 4.0 |
MOQ | 6000 |
Parametric Category | Half-Bridge FET Drivers |
Peak Pull-down Current (A) | 2 |
Peak Pull-up Current (A) | 2 |
Pkg. Type | DFN |
Qualification Level | Standard |
Rise Time (μs) | .010 |
Thickness (mm) | 0.90 |
Turn-Off Prop Delay (ns) | 25 |
Turn-On Prop Delay (ns) | 25 |
VBIAS (Max) (V) | 14 |
Width (mm) | 4.0 |
The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.