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Renesas Electronics Corporation
64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM

Package Information

CAD Model:View CAD Model
Pkg. Type:SOICW
Pkg. Code:MVV
Lead Count (#):28
Pkg. Dimensions (mm):17.9 x 7.5 x 0.20
Pitch (mm):1.3

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
RoHS (X28HC64SZ-12)Download
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

Product Attributes

Carrier TypeTube
Moisture Sensitivity Level (MSL)3
Country of AssemblyTHAILAND, USA
Country of Wafer FabricationUSA
Access Time (ns)120
Family NameByte Alterable EEPROM
InterfaceParallel
Lead Count (#)28
Length (mm)17.9
MOQ75
Memory Capacity (kbit)64
Organization (bit)x 8
Organization (kword)32
Pb (Lead) FreeYes
Pb Free CategoryPb-Free 100% Matte Tin Plate w/Anneal-e3
Pitch (mm)1.3
Pkg. Dimensions (mm)17.9 x 7.5 x 0.20
Pkg. TypeSOICW
Price (USD)$23.94573
Supply Voltage (V)4.5 - 5.5
Temp. Range (°C)0 to +70°C
Thickness (mm)0.2
Width (mm)7.5

Description

The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DATA Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersil’s hardware write protect capability. Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.