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TSE2004GB2B0

Obsolete

DDR4 Temp Sensor with SPD

Alternative(s) Available
TSE2004GB2C0 - DDR4 Temp Sensor with SPD

Features

  • Temperature Sensor + 512 Byte Serial EEPROM
  • 512 Byte Serial EEPROM for SPD
  • Single Supply: 2.2V to 3.6V
  • Accurate timeout support
    • Meets strict SMBus spec of 25ms (min), 35ms (max)
  • Timeout supported for Temp Sensor and EEPROM
  • Timeout supported in all Modes
    • Active mode for Temp sensor and EEPROM
    • EEPROM in standby or Temp sensor in shutdown
    • EEPROM in standby and Temp sensor in shutdown
  • Schmitt trigger and noise filtering on bus inputs
  • 2-wire Serial Interface: 10KHz to 1 MHz max I2C™ /SMBus™
  • Available Package: TDFN-8
TSE2004GB2B0 Memory Module Temp Sensor Application Diagram
TSE2004GB2B0 Memory Module Temp Sensor Application Diagram

Description

The TSE2004GB2B0 is a digital temperature sensor with integrated 4 Kbit EEPROM for memory modules. It features accuracy up to ±0.5°C was designed to target applications demanding highest level of temperature readout.

The TSE2004GB2C0 is the recommended alternative for new designs.

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreePb Free CategoryTemp. Range (°C)
TSE2004GB2B0NCG8ObsoleteN/AOut of StockDFN8#Reel1Yese3 Sn0 to 70°C
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    Recommended Documents (1)

  1. Datasheet
    TSE2004GB2B0 Datasheet
    RECOMMENDED
    PDF 1.32 MB 7WDXRDKU4E7E-5-57668 May 09, 2018

    Datasheets (1)

  1. Datasheet
    TSE2004GB2B0 Datasheet
    RECOMMENDED
    PDF 1.32 MB 7WDXRDKU4E7E-5-57668 May 09, 2018

    Application Notes & White Papers (1)

  1. White Paper
    IDT DDR4 LRDIMMs Let You Have It All
    PDF 1.08 MB 7WDXRDKU4E7E-6-11138 Feb 09, 2016
    With the introduction of 8Gb DRAMs, Load-Reduced DIMMs (LRDIMMs) now outperform Registered DIMMs (RDIMMs) by offering both higher memory capacity and bandwidth. This paper demonstrates how 32GB 2Rx4 LRDIMMs based on 8Gb DDR4 DRAMs provide a superior solution for enterprise servers requiring deep memory and fast data access.

    Product Notices (PCN, EOL, etc) (2)

  1. End Of Life Notice
    PDN# : M-18-02 Product Discontinuance Notice for Select Devices
    PDF 18 KB 7WDXRDKU4E7E-5-63127 Aug 01, 2018
  2. Product Change Notice
    PCN# : M1806-01 Moving from TSMC to SMIC on Select Devices
    PDF 528 KB 7WDXRDKU4E7E-5-63008 Jun 14, 2018
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A white paper authored by IDT (acquired by Renesas) and Micron details research into memory and bandwidth for today's high-performance servers. LRDIMMS and RDIMMS traditionally have been seen as complementary, with the former targeting applications requiring deeper memory and the latter for applications requiring higher bandwidth. 

The introduction of 8-gigabit DRAMS has resulted in a growing number of Internet applications benefiting from both deeper memories and higher bandwidth. This paper shows how 32 GB 2RX4 LRDIMMs transcend similar RDIMMs to meet the needs of today’s data center enterprise servers, by providing an optimal combination of deeper memory and higher data bandwidth, even at mainstream module densities.

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