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TP70H300G4LSGB

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700V 240mΩ SuperGaN GaN FET in PQFN88

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Overview

The TP70H300G4LSGB 700V 240mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN industry-standard package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, achieving over 2kV HBM ESD rating. This device delivers superior performance, standard drive compatibility, easy adoption, and enhanced reliability.

TP70H300G4LSGB Package and Circuit
TP70H300G4LSGB Package and Circuit
  • 240mOhm, 700V GaN Device in PQFN 8x8 industry package
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by:
    • 800V transient over-voltage capability
    • Operation with E-mode Gate drivers without the need for Zener protection
    • 2kV HBM ESD rating
  • Low QRR
  • Reduced crossover loss
  • Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
    • Increased power density
    • Reduced system size and weight
    • Overall reduction in system cost

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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Models
Type Title Date
Model - SPICE
TP70H300G4LSGB SPICE Model
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