Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
- RoHS-compliant and Halogen-free packaging
Description
The TP65H050G4BS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H050G4BS is offered in an industry-standard SMD TO-263 with a common source package configuration.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 50 |
| RDSON (max) (mΩ) | 60 |
| Vth typ (V) | 4 |
| Id max @ 25°C (A) | 34 |
| Qrr typ (nC) | 120 |
| Qg typ (nC) | 16 |
| Qoss (nC) | 120 |
| Ron * Qoss (FOM) | 6000 |
| Ciss (Typical) (pF) | 1000 |
| Coss (Typical) (pF) | 110 |
| trr (Typical) (nS) | 50 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Lead Count (#) |
|---|---|
| TO-263 | 3 |
Applications
- Datacom
- Broad industrial
- PV inverter
- Servo motor