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10A Output Current, Gate Drive, LSDIP 8, 15mm Creepage Distance Optocoupler

Package Information

CAD Model:View CAD Model
Pkg. Type:LSDIP8
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):6.7 x 13.8 x 3.95
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
RoHS (RV1S9994ACCSP-10YV#SC0)EnglishJapanese
ECCN (US)
HTS (US)

Product Attributes

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Temp. Range (°C)-40 to +125
Country of AssemblyJAPAN
Country of Wafer FabricationJAPAN
Breakdown Voltage (BV) (kV rms)7.5
CMTI min. (kV/µs)100
Channels (#)1
Creepage Distance (mm)15
DC IFLH max. (mA)8
IFLH (Max) (mA)8
IOL/IOH (Peak) (A)10
Isolation Voltage (Vrms)7500
Lead CompliantYes
Lead Count (#)8
Length (mm)6.7
MOQ10
Peak Output Current IPK (A)10
Pkg. Dimensions (mm)6.7 x 13.8 x 3.95
Pkg. TypeLSDIP8
Price (USD)$7.5157
SW PDD max. (ns)35
SW PWD max. (ns)35
SW tPLH, tPHL max. (ns)95
Safety Standard UL (UL1577)Approved
Safety Standard VDE (EN IEC 60747-5-5)Approved
Supply Voltage (V)10 - 30
Tape & ReelNo
Target applicationsIGBT,GaN FET,SiC FET and Si power MOSFET gate drive,Industrial inverter / AC Servo,Solar and wind Power Conditioner
Thickness (mm)3.95
UVLOYes
VCC-VEE (Max) (V)35
Width (mm)13.8
tPHL (Max) (μs)0.095
tPLH (Max) (μs)0.095
tf (Typical) (µs)0.01

Description

The RV1S9993A and RV1S9994A are optically coupled isolators that integrate an AlGaAs LED on the input side and a photodiode with a signal‑processing circuit and power MOSFETs on a single output‑side chip. These devices are designed for high common‑mode transient immunity (CMTI), high‑speed switching, and reliable operation at ambient temperatures up to TA = 125°C. They are suitable for driving IGBT, GaN FET, SiC FET, and Si power MOSFET gate drives.