Package Information
| Pkg. Type: | SSOP |
| Pkg. Code: | pkg_20044 |
| Lead Count (#): | 5 |
| Pkg. Dimensions (mm): | 2.5 x 7.5 x 2.1 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| RoHS (RV1S9207ACCSP-10YV#SC0) | EnglishJapanese |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Lead Count (#) | 5 |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Country of Assembly | Japan |
| Country of Wafer Fabrication | Japan |
| Price (USD) | 2.56611 |
| Breakdown Voltage (BV) (kV rms) | 5 |
| Budgetary Price (100u) (USD) | 2.499 |
| Budgetary Price (1ku) (USD) | 1.943 |
| Budgetary Price (1u) (USD) | 3.498 |
| CMTI min. (kV/µs) | 50 |
| Channels (#) | 1 |
| Creepage Distance (mm) | 8.2 |
| DC IFLH max. (mA) | 5 |
| IFLH (Max) (mA) | 5 |
| IOL/IOH (Peak) (A) | 0.6 |
| Isolation Voltage (Vrms) | 5000 |
| Lead Compliant | Yes |
| Length (mm) | 2 |
| Longevity | 2030 Dec |
| MOQ | 20 |
| Peak Output Current IPK (A) | 0.6 |
| Pkg. Dimensions (mm) | 2 x 8 x 2.1 |
| Pkg. Type | SSOP |
| SW PDD max. (ns) | 80 |
| SW PWD max. (ns) | 50 |
| SW tPLH, tPHL max. (ns) | 150 |
| Safety Standard CSA (CAN/CSA C22.2 62368-1) | Approved |
| Safety Standard UL (UL1577) | Approved |
| Safety Standard VDE (EN IEC 60747-5-5) | Approved |
| Supply Voltage (V) | 10 - 30 |
| Tape & Reel | No |
| Target applications | AC Servo, Industrial inverter, Solar inverter, Uninterruptible Power Supply (UPS), IGBT Gate Driver, Power MOSFET Gate Driver |
| Thickness (mm) | 2.1 |
| VCC-VEE (Max) (V) | 35 |
| Width (mm) | 8 |
| tPHL (Max) (μs) | 0.15 |
| tPLH (Max) (μs) | 0.15 |
| tf (Typical) (µs) | 0.007 |
Resources for RV1S9207A
Description
The RV1S9207A is an optical coupled isolator containing an AlGaAs LED on the input side and a photodiode, a signal processing circuit and power output MOSFETs on the output side on one chip. The RV1S9207A is designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOSFETs.