Package Information
| Pkg. Type | Wafer |
Environmental & Export Classifications
| Pb (Lead) Free | No |
| ECCN (US) | 5A002 |
| RoHS (RJP65S04DWA-80#W0) | EnglishJapanese |
| Moisture Sensitivity Level (MSL) | |
| HTS (US) |
Product Attributes
| Longevity | 2025 Mar |
| Pkg. Type | Wafer |
| Pb (Lead) Free | No |
| Application | Inverter |
| Channels (#) | 1 |
| IC @100 °C (A) | 50 |
| IC @25 °C (A) | 100 |
| Lead Compliant | No |
| MOQ | 1 |
| Nch/Pch | Nch |
| Qualification Level | Industrial |
| Series Name | 65Sx Series |
| Tape & Reel | No |
| VCE (sat) (V) | 1.5 |
| VCES (V) | 650 |
| VDSS (Max) (V) | 650 |
| tf (Typical) (µs) | 0.1 |
| tsc (μs) | 10 |
Description
The RJP65S04DWA 650V, 50A insulated-gate bipolar transistor (IGBT) offers high-speed switching, low collector to emitter saturation voltage, and is available in an Unsawn wafer package type.