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IGBT 1250V 30A Wafer

Package Information

Pkg. Type Wafer

Environmental & Export Classifications

Pb (Lead) Free No
ECCN (US) 5A002
RoHS (RJP1CS03DWA-80#W0) EnglishJapanese
Moisture Sensitivity Level (MSL)
HTS (US)

Product Attributes

Longevity 2025 Mar
Pkg. Type Wafer
Pb (Lead) Free No
Application Inverter
Channels (#) 1
IC @100 °C (A) 30
IC @25 °C (A) 60
Lead Compliant No
MOQ 1
Nch/Pch Nch
Qualification Level Industrial
Series Name 1CSxx Series
Tape & Reel No
VCE (sat) (V) 1.8
VCES (V) 1250
VDSS (Max) (V) 1250
tf (Typical) (µs) 0.16
tsc (μs) 10

Description

The RJP1CS03DWA 1250V, 30A insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.