Package Information
| Pkg. Type | Wafer |
| Pkg. Code | |
| Lead Count (#) | |
| Pkg. Dimensions (mm) |
Environmental & Export Classifications
| Pb (Lead) Free | No |
| ECCN (US) | 5A002 |
| RoHS (RJP1CS03DWA-80#W0) | EnglishJapanese |
| Moisture Sensitivity Level (MSL) | |
| HTS (US) |
Product Attributes
| Pkg. Type | Wafer |
| Pb (Lead) Free | No |
| Application | Inverter |
| Channels (#) | 1 |
| IC @100 °C (A) | 30 |
| IC @25 °C (A) | 60 |
| Lead Compliant | No |
| MOQ | 1 |
| Nch/Pch | Nch |
| Qualification Level | Industrial |
| Series Name | 1CSxx Series |
| Tape & Reel | No |
| VCE (sat) (V) | 1.8 |
| VCES (V) | 1250 |
| VDSS (Max) (V) | 1250 |
| tf (Typical) (µs) | 0.16 |
| tsc (μs) | 10 |
Description
The RJP1CS03DWA 1250V, 30A insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.