Pkg. Type | Wafer |
Pb (Lead) Free | No |
ECCN (US) | 5A002 |
RoHS (RJP1CS03DWA-80#W0) | EnglishJapanese |
Moisture Sensitivity Level (MSL) | |
HTS (US) |
Longevity | 2025 Mar |
Pkg. Type | Wafer |
Pb (Lead) Free | No |
Application | Inverter |
Channels (#) | 1 |
IC @100 °C (A) | 30 |
IC @25 °C (A) | 60 |
Lead Compliant | No |
MOQ | 1 |
Nch/Pch | Nch |
Qualification Level | Industrial |
Series Name | 1CSxx Series |
Tape & Reel | No |
VCE (sat) (V) | 1.8 |
VCES (V) | 1250 |
VDSS (Max) (V) | 1250 |
tf (Typical) (µs) | 0.16 |
tsc (μs) | 10 |
The RJP1CS03DWA 1250V, 30A insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.