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IGBT 650V 30A TO-3PFP Built-In FRD

Package Information

Pkg. Type: TO-3PFP
Pkg. Code: pkg_11876
Lead Count (#): 3
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
RoHS (RJH65T04BDPM-A0#T2) EnglishJapanese
ECCN (US)
HTS (US)

Product Attributes

Pkg. Type TO-3PFP
Lead Count (#) 3
Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
Price (USD) 8.64
Application PFC
Channels (#) 2
Configuration Built-In FRD
FRD Vf (V) 1.4
FRD trr (ns) 80
IC @100 °C (A) 30
IC @25 °C (A) 60
Ic (Peak) (A) 120
Lead Compliant No
Length (mm) 24
MOQ 1
Mounting Type Through Hole
Pc (W) 65
Pch (W) 65
Qualification Level Industrial
Series Name 65T0x Series
Simulation Model Available Yes
Tape & Reel No
VCE (sat) (V) 1.5
VCES (V) 650
VDSS (Max) (V) 650
Width (mm) 16
tf (Typical) (µs) 0.045

Description

The RJH65T04BDPM-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-3PFP package type.