Pkg. Type: | TO-3PFP |
Pkg. Code: | pkg_11876 |
Lead Count (#): | 3 |
Pkg. Dimensions (mm): | |
Pitch (mm): |
Moisture Sensitivity Level (MSL) | 1 |
Pb (Lead) Free | Yes |
RoHS (RJH65T04BDPM-A0#T2) | EnglishJapanese |
ECCN (US) | |
HTS (US) |
Pkg. Type | TO-3PFP |
Lead Count (#) | 3 |
Moisture Sensitivity Level (MSL) | 1 |
Pb (Lead) Free | Yes |
Price (USD) | 8.64 |
Application | PFC |
Channels (#) | 2 |
Configuration | Built-In FRD |
FRD Vf (V) | 1.4 |
FRD trr (ns) | 80 |
IC @100 °C (A) | 30 |
IC @25 °C (A) | 60 |
Ic (Peak) (A) | 120 |
Lead Compliant | No |
Length (mm) | 24 |
MOQ | 1 |
Mounting Type | Through Hole |
Pc (W) | 65 |
Pch (W) | 65 |
Qualification Level | Industrial |
Series Name | 65T0x Series |
Simulation Model Available | Yes |
Tape & Reel | No |
VCE (sat) (V) | 1.5 |
VCES (V) | 650 |
VDSS (Max) (V) | 650 |
Width (mm) | 16 |
tf (Typical) (µs) | 0.045 |
The RJH65T04BDPM-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-3PFP package type.