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100V, 340A, 1.5mΩ, REXFET-1 N-Channel Power MOSFET in TOLL

Package Information

CAD Model:View CAD Model
Pkg. Type:TOLL
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):9.90 x 11.68 x 2.30
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
ECCN (US)
HTS (US)8541.29.0095
RoHS (RBE015N10R1SZQ4#GB0)EnglishJapanese
Pb (Lead) FreeYes

Product Attributes

Pkg. TypeTOLL
Standard Pkg. TypeTOLL
Lead Count (#)8
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Channels (#)1
Ciss (Typical) (pF)13000
Country of AssemblyCHINA
Country of Wafer FabricationJAPAN
FunctionPower MOSFETs
Gate LevelStandard
ID (A)340
Id max @ 25°C (A)340
Lead CompliantNo
Length (mm)11.68
MOQ2000
Mounting TypeSurface Mount
Nch/PchNch
Pb (Lead) FreeYes
Pch (W)468
Pkg. Dimensions (mm)9.90 x 11.68 x 2.30
Price (USD)$2.321
Qg typ (nC)170
Qualification LevelIndustrial
RDS (ON) (Max) @10V (mohm)1.5
RDS (ON) (Typical) @ 10V / 8V (mohm)1.3
Series NameREXFET-1
Simulation Model AvailableYes
Tape & ReelYes
Thickness (mm)2.3
VDSS (Max) (V)100
VGSS (V)20
Vgs (off) (Max) (V)4
Width (mm)9.9

Description

The RBE015N10R1SZQ4 N-channel Power MOSFET features REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features ultra-compact, leadless designs with Wettable Flanks for enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.