Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community
100V, 40A, 11.1mΩ, REXFET-1 N-Channel Power MOSFET in μSO8-FL for Automotive

Package Information

CAD Model:View CAD Model
Pkg. Type:uSO8-FL
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)
HTS (US)8541.29.0095
RoHS (RBA40N10EANS-5UA11#HB0)EnglishJapanese

Product Attributes

Pkg. TypeuSO8-FL
Lead Count (#)8
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Channels (#)1
Ciss (Typical) (pF)1700
Country of AssemblyCHINA
Country of Wafer FabricationJAPAN
FunctionPower MOSFETs
Gate LevelStandard
ID (A)40
Id max @ 25°C (A)40
Lead CompliantNo
MOQ3000
Mounting TypeSurface Mount
Nch/PchNch
Pch (W)57
Price (USD)$0.5434
Qg typ (nC)27
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)11.1
RDS (ON) (Typical) @ 10V / 8V (mohm)9.7
Series NameREXFET-1
Simulation Model AvailableYes
Standard Pkg. TypeμSO8-FL 3x3 BSC
Tape & ReelNo
VDSS (Max) (V)100
VGSS (V)20
Vgs (off) (Max) (V)4

Description

The RBA40N10EANS-5UA11 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The ultra-compact package is approximately 90% smaller than the traditional DPAK, helping reduce board space and enhance design flexibility. Additionally, it uses Wettable Flank leads that provide excellent solderability and support reliable optical inspection.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.