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Features

  • Super low on-state resistance
    • RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 9500pF TYP. (VDS = 50 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Description

The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

Attributes Value
Qualification Level Automotive
Nch/Pch Nch
Channels (#) 1
Standard Pkg. Type TO-263-7 / D2PAK-7
VDSS (Max) (V) 100
ID (A) 250
RDS (ON) (Max) @10V or 8V (mohm) 2.4
RDS (ON) (Typical) @ 10V / 8V (mohm) 1.9
Pch (W) 348
Vgs (off) (Max) (V) 4
VGSS (V) 20
Ciss (Typical) (pF) 9500
Qg typ (nC) 190
Mounting Type Surface Mount

Package Options

Pkg. Type Pkg. Dimensions (mm) Lead Count (#)
MP-25ZU 10 x 9 x 4.65 7

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