Features
- Super low on-state resistance
- RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
- Low input capacitance
- Ciss = 9500pF TYP. (VDS = 50 V)
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
Description
The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Parameters
Attributes | Value |
---|---|
Qualification Level | Automotive |
Nch/Pch | Nch |
Channels (#) | 1 |
Standard Pkg. Type | TO-263-7 / D2PAK-7 |
VDSS (Max) (V) | 100 |
ID (A) | 250 |
RDS (ON) (Max) @10V or 8V (mohm) | 2.4 |
RDS (ON) (Typical) @ 10V / 8V (mohm) | 1.9 |
Pch (W) | 348 |
Vgs (off) (Max) (V) | 4 |
VGSS (V) | 20 |
Ciss (Typical) (pF) | 9500 |
Qg typ (nC) | 190 |
Mounting Type | Surface Mount |
Package Options
Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
---|---|---|
MP-25ZU | 10 x 9 x 4.65 | 7 |
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