Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

Features

  • VDSS = 100V
  • Standard-level gate drive voltage: VGS(th) = 2.0~4.0V
  • Super low on-state resistance: RDS(on) = 1.9mΩ max.
  • ID = 230A
  • Low input capacitance
  • Low thermal resistance
  • 100% Avalanche tested
  • AEC-Q101 qualified
  • Production Part Approval Process (PPAP) capable
  • Pb-free lead plating: RoHS compliant
  • MSL1 classified according to IPC/JEDEC J-STD-020

Description

The RBA019N10R1SBPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTOLT
Gate LevelStandard
VDSS (Max) (V)100
ID (A)230
RDS (ON) (Max) @10V (mohm)1.9
Pch (W)405
Ciss (Typical) (pF)11000
Qg typ (nC)140
Series NameREXFET-1

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
TOLT15 x 9.9 x 2.316

Applications

  • Small traction (2-wheel, 3-wheel vehicle)
  • 48V battery system and motor drive
  • Onboard charger
  • Charging station
  • Low voltage DC/DC
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
RBA019N10R1SBPW#KB0ActiveAvailableIn StockRoHS:EN
RoHS:JA
TOLT1ku | $1.50716#Embossed Tape1Yes
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?