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Gate Driver for HEV/EV

Package Information

CAD Model:View CAD Model
Pkg. Type:SSOP48
Pkg. Code:
Lead Count (#):48
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (R2A25110KSP#U50)EnglishJapanese

Product Attributes

Lead Count (#)48
Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
Temp. Range (°C)-40 to +125
Country of AssemblyMALAYSIA
Country of Wafer FabricationJAPAN
Channels (#)1
Common Mode Transient Immunity (kV/µs)35
IGBT temperature monitorAvailable (PWM output)
Input Voltage (Max) (V)5.5
Input Voltage (Max) [Rail 1] (V)4.5 - 5.5
Input Voltage (Max) [Rail 2] (V)12.5 - 21.5
Input Voltage (Min) (V)4.5
Input Voltage (Min) [Rail 1] (V)4.5
Input Voltage (Min) [Rail 2] (V)12.5
Isolation Voltage (Vrms)2500
Lead CompliantYes
MOQ1
On Resistance (Ω)1
Parametric ApplicationsAutomotive Inverter/Converter
Parametric CategoryHigh-Side FET Drivers
Pkg. TypeSSOP48
Price (USD)$7.5012
Qualification LevelAutomotive
Tape & ReelNo
Turn-Off Prop Delay (ns)140
Turn-On Prop Delay (ns)140

Description

The R2A25110KSP is a single channel IGBT gate-drive IC and suitable for high voltage inverter application. The Micro Isolator with the coreless transformer structure is adopted for data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side).

This device contains IGBT gate drive circuit, Miller clamp circuit, soft turn-off circuit as well as several types of protection circuits such as IGBT temperature detection. This device also supports driving parallel IGBTs.