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1Mb Advanced LPSRAM (128k word x 8bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:SOP
Pkg. Code:pkg_9335
Lead Count (#):32
Pkg. Dimensions (mm):21 x 11 x 3.05
Pitch (mm):1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

Product Attributes

Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)3
Country of AssemblyTAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)55
Density (Kb)1000
Lead CompliantYes
Lead Count (#)32
Length (mm)21
MOQ1000
Memory Capacity (kbit)1000
Memory Density1
Organization128K x 8
Organization (bit)x 8
Organization (kword)128
Pb (Lead) FreeYes
Pkg. Dimensions (mm)21 x 11 x 3.05
Pkg. TypeSOP
Price (USD)$2.1252
RemarksDual Chip Select (CS1#, CS2)
Replacement RemarkAssembly site transfer to serve the objective of stable supply
Supply Voltage (V)2.7 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)3.05
Width (mm)11

Description

The R1LV0108E is a low-voltage 1-Mbit static RAM organized as 131, 072-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0108E realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. It is packaged in a 32-pin SOP, 32-pin TSOP, and 32-pin sTSOP.